Portal de Periódicos da CAPES

Ultraviolet GaN-based microdisk laser with AlN/AlGaN distributed Bragg reflector

2010; American Institute of Physics; Volume: 96; Issue: 15 Linguagem: Inglês

10.1063/1.3399781

1520-8842

Cheng‐Chang Chen, Min‐Hsiung Shih, Yi‐Chun Yang, Hao‐Chung Kuo,

Semiconductor Quantum Structures and Devices

We demonstrated a 4.7 μm GaN-based microdisk laser with 25-pair AlN/AlGaN distributed Bragg reflector in ultraviolet range without undercut or deeply-etching procedures. The distributed Bragg reflector provides a high reflectivity of 85%, and selects lasing mode around 375 nm wavelength. Under optical pumping conditions, the lasing action was observed with a low threshold power density of 0.03 kW/cm2. We also characterized the whispering gallery mode profiles of the microdisk with finite-different time-domain simulation.