Artigo Revisado por pares

High‐Performance Ambipolar Diketopyrrolopyrrole‐Thieno[3,2‐ b ]thiophene Copolymer Field‐Effect Transistors with Balanced Hole and Electron Mobilities

2011; Volume: 24; Issue: 5 Linguagem: Inglês

10.1002/adma.201102786

ISSN

1521-4095

Autores

Zhuoying Chen, Mi Jung Lee, Raja Shahid Ashraf, Yun Gu, Sebastian Albert‐Seifried, M. Nielsen, Bob C. Schroeder, Thomas D. Anthopoulos, Martin Heeney, Iain McCulloch, Henning Sirringhaus,

Tópico(s)

Advanced Memory and Neural Computing

Resumo

Ambipolar OFETs with balanced hole and electron field-effect mobilities both exceeding 1 cm(2) V(-1) s(-1) are achieved based on a single-solution-processed conjugated polymer, DPPT-TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high-performance OFETs are promising for applications in ambipolar devices and integrated circuits, as well as model systems for fundamental studies.

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