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Radio Frequency Performance of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

2011; Institute of Physics; Volume: 50; Issue: 12R Linguagem: Inglês

10.1143/jjap.50.124301

1347-4065

In Man Kang, Jung-Shik Jang, Woo Young Choi,

Silicon Carbide Semiconductor Technologies

Radio frequency (RF) performances of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) have been compared with those of SiO 2 -only and high- k -only TFETs in terms of f T , f max , gate capacitance, channel resistance, and transconductance. HG TFETs can have higher f T / f max and smaller switching time than SiO 2 -only TFETs and high- k -only TFETs because they have higher g m and current drivability than SiO 2 -only TFET and smaller gate capacitance than high- k -only TFET.