Visible electroluminescence from Si+-implanted SiO2 films thermally grown on crystalline Si
1996; Elsevier BV; Volume: 97; Issue: 12 Linguagem: Inglês
10.1016/0038-1098(95)00846-2
ISSN1879-2766
AutoresLiang‐Sheng Liao, Xi‐Mao Bao, Ning-Sheng Li, Xiangqin Zheng, Nai-Ben Min,
Tópico(s)Semiconductor materials and devices
ResumoThermally grown SiO2 films on p-type crystalline Si wafers were implanted with Si+, and metal-insulator-semiconductor (MIS) structures were fabricated with a semitransparent Au layer on the top of the SiO2 films. The MIS structures exhibit electroluminescence (EL) under forward bias. The EL spectrum has a main peak at ∼2.0 eV and a shoulder at ∼1.7 eV, which is similar to the photoluminescence of the same implanted SiO2 films. The EL mechanism is also discussed.
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