Growth of polysilicon sheets on a carbon shaper by the RAD process
1983; Elsevier BV; Volume: 61; Issue: 3 Linguagem: Inglês
10.1016/0022-0248(83)90190-2
ISSN1873-5002
AutoresC. Belouet, C. Texier-Hervo, M. Mautref, C. Belin, João Vitor Paulin, Jens Schneider,
Tópico(s)Nanowire Synthesis and Applications
ResumoThe growth of polysilicon sheets on a continuous carbon shaper using the RAD process is reported. The basic aspects of the RAD process and the characteristics of the carbon shaper are described. It is shown that layers 5 cm in width and 100 μm in thickness can be grown at pulling rates of 10 cm/min with a crystallinity similar to that of self-supporting silicon ribbons. The present solar cells made from this material, using the carbon shaper as a back-contact, have an air-mass-one (AM1) conversion efficiency of nearly 10%.
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