Voltar
Artigo Revisado por pares
BIBTEX RIS

Chemical Stability of HF-Treated Si(111) Surfaces

1991; Institute of Physics; Volume: 30; Issue: 12S Linguagem: Inglês

10.1143/jjap.30.3567

ISSN

1347-4065

Autores

T. Yasaka, Kozo Kanda, Kenichi Sawara, Seiichi Miyazaki, Masataka Hirose,

Tópico(s)

Ga2O3 and related materials

Resumo

Growth kinetics of native oxide on Si(111) surfaces treated in pH-modified buffered HF (BHF) solutions has been systematically studied by angle-resolved X-ray photoelectron spectroscopy. A BHF-etched (pH=5.3) Si(111) surface has no Si-F bonds and dose not oxidize for 300 min in clean room air. FT-IR-attenuated total reflection (ATR) measurements of Si-H bonds existing on the BHF-treated Si(111) surface have revealed that the surface is nearly step-free and atomically flat. This explains the chemical stability of the Si(111) surface.

Referência(s)