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MOCVD growth of Bi2Te3 layers using diethyltellurium as a precursor

1998; Elsevier BV; Volume: 315; Issue: 1-2 Linguagem: Inglês

10.1016/s0040-6090(97)00792-x

1879-2731

Alain Giani, Abdellah Boulouz, F. Pascal‐Delannoy, A. Foucaran, Alexandre Boyer,

Physics of Superconductivity and Magnetism

The growth of Bi2Te3 thin films by metal organic chemical vapour deposition (MOCVD) using diethytellurium and trimethylbismuth as tellurium and bismuth sources respectively is investigated on pyrex substrates. The results of growth rate, morphology, electrical and thermoelectrical properties as a function of growth parameters are given. The prepared films were always n-type. Film properties, such as electrical resistivity, mobility, carrier concentration, thermoelectric power and X-ray diffraction were studied at 300 K. For VI/V ratio greater than 6, we found an electrical resistivity lower than 9 μΩ.m and a thermoelectrical power equal to 210 μV/K. Hall mobility varies from 28 and 150 cm2/V.s. These initial results suggest a significant potential of MOCVD growth for large-scale production of thermoelectric material.