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Evaluation of minority carrier diffusion length of undoped n-BaSi 2 epitaxial thin films on Si(001) substrates by electron-beam-induced-current technique

2014; Institute of Physics; Volume: 53; Issue: 7 Linguagem: Inglês

10.7567/jjap.53.078004

1347-4065

Masakazu Baba, Kentaro Watanabe, Kosuke O. Hara, Kaoru Toko, Takashi Sekiguchi, Noritaka Usami, Takashi Suemasu,

Semiconductor materials and devices

We have grown a 400-nm-thick undoped n-BaSi2 epitaxial film on an n-Si(001) substrate by molecular beam epitaxy, and evaluated the diffusion length of minority carriers (holes) by an electron-beam-induced-current (EBIC) technique in the edge-scan configuration. The EBIC line-scan profile showed an exponential dependence on the distance from the tungsten probe. The diffusion length of minority carriers in the n-BaSi2 film was found to be approximately 1.5 µm. This value is much smaller than that in undoped n-BaSi2 on Si(111).