Superconducting films grown i n s i t u by the activated reactive evaporation process
1989; American Institute of Physics; Volume: 55; Issue: 5 Linguagem: Inglês
10.1063/1.101571
ISSN1520-8842
AutoresS. Prakash, Dheerendra M. Umarjee, H.J. Doerr, C.V. Deshpandey, R.F. Bunshah,
Tópico(s)ZnO doping and properties
ResumoThe low-pressure activated reactive evaporation process was used successfully to grow superconducting thin films that were uniform in thickness, free of cracks, voids, spits, and other source-related defects, and with mirror-like surface smoothness. These are important considerations for the practical use of these materials in thin-film form. No post-deposition annealing was carried out. Tc (0) for films on yttria-stabilized zirconia (YSZ) substrates is close to 80 K, and the (001) preferred orientation was observed with higher deposition temperatures in the range 550–650 °C. Films on silicon and sapphire substrates were adversely affected by interdiffusion, showing a Tc (0) of 56 and 72 K, respectively.
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