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Bias-induced threshold voltages shifts in thin-film organic transistors

2004; American Institute of Physics; Volume: 84; Issue: 16 Linguagem: Inglês

10.1063/1.1713035

1520-8842

Henrique L. Gomes, Peter Stallinga, Franco Dinelli, Mauro Murgia, Fabio Biscarini, Dago M. de Leeuw, T. Muck, J. Geurts, L. W. Molenkamp, V. Wagner,

Advanced Memory and Neural Computing

An investigation into the stability of metal-insulator-semiconductor (MIS) transistors based on α-sexithiophene is reported. In particular, the kinetics of the threshold voltage shift upon application of a gate bias has been determined. The kinetics follow stretched-hyperbola-type behavior, in agreement with the formalism developed to explain metastability in amorphous-silicon thin-film transistors. Using this model, quantification of device stability is possible. Temperature-dependent measurements show that there are two processes involved in the threshold voltage shift, one occurring at T≈220 K and the other at T≈300 K. The latter process is found to be sample dependent. This suggests a relation between device stability and processing parameters.