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The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta/sub 2/O/sub 5/--SiO/sub 2/ distributed Bragg reflectors

2006; Institute of Electrical and Electronics Engineers; Volume: 18; Issue: 7 Linguagem: Inglês

10.1109/lpt.2006.871814

1941-0174

Chih-Chiang Kao, Tien‐Chang Lu, Hung-Wen Huang, J.T. Chu, Yu Chieh Peng, H.H. Yao, Jang‐Zern Tsai, Tsung‐Ting Kao, Hao‐Chung Kuo, S.C. Wang, Chia‐Feng Lin,

Semiconductor Lasers and Optical Devices

The characteristics of a GaN-based vertical-cavity surface-emitting laser (VCSEL) with 25 pairs AlN-GaN distributed Bragg reflector (DBR) and eight pairs Ta 2 O 5 --SiO 2 DBR was investigated and analyzed under the optical pumping at room temperature. The GaN-based VCSEL emits a blue wavelength at 448 nm with a linewidth of 0.17 nm with a near-field emission spot diameter of about 3 μm. The laser beam has a near linear polarization with a degree of polarization of about 84%. The laser shows a high spontaneous emission coupling efficiency of about 5×10/sup -2/ and a high characteristic temperature of about 244 K.