Ground-state lasing of stacked InAs∕GaAs quantum dots with GaP strain-compensation layers grown by metal organic chemical vapor deposition
2006; American Institute of Physics; Volume: 88; Issue: 22 Linguagem: Inglês
10.1063/1.2208553
ISSN1520-8842
AutoresJun Tatebayashi, Noppadon Nuntawong, Y.-C. Xin, P. S. Wong, S. Huang, C.P. Hains, L. F. Lester, Diana L. Huffaker,
Tópico(s)Photonic and Optical Devices
ResumoWe report the device characteristics of stacked InAs∕GaAs quantum dots (QDs) with GaP strain-compensation (SC) layers grown by metal organic chemical vapor deposition. By inserting GaP SC layers within the stacked structures, decrease in the density of QDs by stacking QDs can be suppressed due to reduction of overall compressive strain within the stacked QDs. We demonstrate ground-state lasing at 1.265μm of six layers of InAs∕GaAs QDs with GaP SC layers. The threshold current density is as low as 108A∕cm2. We also assess the internal loss and maximum modal gain of fabricated QD lasers by using a segmented contact method. The internal loss is as low as 5cm−1, and the maximum modal gain of the ground state of the stacked QDs is approximately 10cm−1.
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