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Reverse current and external quantum efficiency of zinc diffused 1.3-μm GaAlAsSb photodiodes

1990; American Institute of Physics; Volume: 68; Issue: 8 Linguagem: Inglês

10.1063/1.346250

1520-8850

M. Mébarki, T. Belatoui, A. Joullié, B. Orsal, R. Alabédra,

Chalcogenide Semiconductor Thin Films

Zinc-diffused p+n photodiodes were prepared from 1.3-μm GaAlAsSb solid solution grown on GaSb (111) substrate by liquid-phase epitaxy. The reverse dark current was measured in the 77–300 K temperature domain. It has been found dominated by a defect tunneling component in a wide voltage range. The study of spectral photoresponse shows external quantum efficiency (without AR coating) as high as 57% at 1.3 μm.