Dielectric properties of sol–gel derived Ta2O5 thin films
2005; Elsevier BV; Volume: 77; Issue: 3 Linguagem: Inglês
10.1016/j.vacuum.2004.12.002
ISSN1879-2715
AutoresS. Yildirim, K. Ulutaş, Deniz Değer, Esra Özkan Zayim, İ. Türhan,
Tópico(s)Microwave Dielectric Ceramics Synthesis
ResumoThe dielectric constant and the dielectric loss of tantalum pentoxide (Ta2O5) thin films, produced by sol–gel spin-coated process on Corning glass substrates, have been investigated in the frequency range of 20–105 Hz and the temperature range of 183–403 K, using ohmic Al electrodes. The frequency and temperature dependence of relaxation time has also been determined. The capacitance and loss factor were found to decrease with increasing frequency and increase with increasing temperature. The activation energy values were evaluated and a good agreement between the activation energy values obtained from capacitance and dielectric loss factor measurements were observed.
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