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Preparation and Properties of CuInS 2 Thin Films Produced by the Reactive Sputtering Method

1995; Institute of Physics; Volume: 34; Issue: 4B Linguagem: Inglês

10.1143/jjap.34.l513

1347-4065

Satoshi Kobayashi, Dan Yang Yu, Mohammad Mustafa Sarinanto, Yasuyuki Kobayashi, Futao Kaneko, Takahiro Kawakami,

Quantum Dots Synthesis And Properties

Nearly stoichiometric CuInS 2 thin films have been prepared on Pyrex slide glass by the reactive sputtering method using CS 2 as a reactive gas at a substrate temperature of 150° C by controlling the CS 2 partial pressure. Sputtering for 2 hours yields the thickness of 1∼2 µ m. The films are preferentially oriented with the (112) plane parallel to the substrate. The forbidden gap is estimated to be 1.51 eV which is slightly smaller than that of the single crystal. For films with fairly good stoichiometry, the conduction is p-type and the resistivity ranges between 10 and 10 4 Ω· cm. A fairly large amount of carbon is incorporated during growth.