Long wavelength infra-red photoconductive InAsSb detectors grown in Si wells by molecular beam epitaxy
1990; Institution of Engineering and Technology; Volume: 26; Issue: 4 Linguagem: Inglês
10.1049/el
ISSN1350-911X
AutoresWim Dobbelaere, J. De Boeck, M. Van Hove, W. De Raedt, W. De Raedt, R. Mertens, G. Borghs,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoInAs0.05Sb0.95 photoconductive infra-red detectors have been grown by molecular beam epitaxy in recessed Si wells. The embedded devices exhibited a voltage responsivity of 420V/W at 77K and 300meV photon energy with a load resistor of 100Ω and a bias voltage of 1.5V.
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