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Fe–N Films Prepared by Dual Ion Beam Sputtering

1998; Institute of Physics; Volume: 37; Issue: 1R Linguagem: Inglês

10.1143/jjap.37.279

1347-4065

Toshihiko Nagase, Kazuo Shiiki,

Metal and Thin Film Mechanics

Fe–N films containing less than about 30 at.% N were prepared on glass substrates and GaAs (100) single crystal wafers by the dual ion beam sputtering (DIBS) method. As nitrogen concentration and substrate temperature increased, α-phase, γ ′ -phase and ε -phase were formed on both substrates. The phase diagrams of the Fe–N films on both substrates were similar, although there was a slight difference in the crystalline orientation of the Fe–N films. A new α-phase supersaturated with nitrogen was found at concentrations lower than about 15 at.% N, which was much higher than that in the bulk. No α ′ -phase was detected. The lattice parameter of this phase increased from 2.88 to 2.96 Å at about 15 at.% N. The saturation magnetization decreased monotonically as the nitrogen concentration increased, due to simple dilution.