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The GeSi bond in silylgermane. Discrepancy between experiment and theory

1994; Elsevier BV; Volume: 323; Linguagem: Inglês

10.1016/0022-2860(94)07992-7

1872-8014

Heinz Oberhammer, Thomas Lobreyer, Wolfgang Sundermeyer,

Crystallography and molecular interactions

The gas-phase structure of H3GeSiH3 was determined by joint analysis of electron diffraction intensities and the rotational constant. The following geometric parameters (ra distances and ∠α angles with 2σ uncertainties) were obtained: GeSi = 2.364(1), GeH = 1.538(3), SiH = 1.494(6) Å, HGeH = HSiH = 108.8(3)°. The experimental GeSi bond length is 0.04–0.07 Å shorter than various ab initio results reported in the literature.