Electroreflectance of In0.79Ga0.21As0.54P0.46
1978; American Institute of Physics; Volume: 33; Issue: 10 Linguagem: Inglês
10.1063/1.90215
ISSN1520-8842
AutoresT. Nishino, Yoshimitsu Yamazoe, Yoshihiro Hamakawa,
Tópico(s)Surface and Thin Film Phenomena
ResumoWe have measured Schottky-barrier electroreflectance spectra of an In0.79Ga0.21As0.54P0.46 LPE layer at 81 K. Analysis of the spectra has enabled us to determine the interband reduced mass of the quaternary alloy together with the values of the band gap and spin-orbit splitting. The obtained reduced mass μ=0.033m0, in agreement with the value calculated from interpolations of the accepted values for the related binary compounds.
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