Novel metalorganic chemical vapor deposition system for GaN growth
1991; American Institute of Physics; Volume: 58; Issue: 18 Linguagem: Inglês
10.1063/1.105239
ISSN1520-8842
AutoresShuji Nakamura, Yasuhiro Harada, Masayuki Seno,
Tópico(s)Ga2O3 and related materials
ResumoA novel metalorganic chemical vapor deposition (MOCVD) system, which has two different flows, has been developed. One flow carries a reactant gas parallel to the substrate, and the other an inactive gas perpendicular to the substrate for the purpose of changing the direction of the reactant gas flow. The growth of a GaN film was attempted using this system, and a high quality, uniform film was obtained over a 2 in. sapphire substrate. The carrier concentration and Hall mobility are 1×1018/cm3 and 200 cm2/V s, respectively, which are the highest for GaN films grown directly on a sapphire substrate by the MOCVD method.
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