Nitrogen engineering of ultrathin oxynitrides by a thermal NO/O2/NO process
1998; American Institute of Physics; Volume: 84; Issue: 5 Linguagem: Inglês
10.1063/1.368435
ISSN1520-8850
AutoresE. P. Gusev, Hongcheng Lu, Eric Garfunkel, T. Gustafsson, M. L. Green, D. Brasen, W. N. Lennard,
Tópico(s)Advanced Memory and Neural Computing
ResumoThe paper discusses nitrogen engineering of ultrathin (<5 nm) oxynitride gate dielectrics. The dielectric film that we have aimed for has two nitrogen enhanced layers: one at the SiO2/polysilicon interface to retard boron diffusion from the gate, and a smaller one peaked at the Si/SiO2 interface to increase the hot electron degradation resistance. We were able to produce this dielectric by a thermal (NO/O2/NO) process, aided by an understanding of the kinetics and thermodynamics of nitrogen incorporation in SiO2.
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