Natural ordering of ZnO1−xSex grown by radical source MBE
2003; Elsevier BV; Volume: 251; Issue: 1-4 Linguagem: Inglês
10.1016/s0022-0248(02)02206-6
ISSN1873-5002
AutoresK. Iwata, A. Yamada, Paul Fons, Koji Matsubara, Shigeru Niki,
Tópico(s)Advanced Semiconductor Detectors and Materials
ResumoAbstract We have grown the compound semiconductor ZnO 1− x Se x by radical source MBE. SIMS depth profile of Se concentration shows the compositional ordering of the ZnO 1− x Se x layers. The period of ZnO 1− x Se x natural compositional ordering decreases with increasing Se concentration. The lateral coherence of the compositional alternations of ZnO 1− x Se x cannot be explained without taking into account the dynamical surface processes into consideration.
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