Metalorganic chemical vapor deposition of GaInNAs lattice matched to GaAs for long-wavelength laser diodes
1998; Elsevier BV; Volume: 192; Issue: 3-4 Linguagem: Inglês
10.1016/s0022-0248(98)00442-4
ISSN1873-5002
Autores Tópico(s)Advanced Semiconductor Detectors and Materials
ResumoThe crystal growth of GaInNAs lattice matched to GaAs by metalorganic chemical vapor deposition using dimethylhydrazine as the nitrogen source is described for realizing long-wavelength laser diodes. It was found that the crystalline quality of GaInNAs on AlGaAs is improved by inserting a GaAs spacer layer between GaInNAs and AlGaAs. The photoluminescence spectra of GaAs/Ga0.9In0.1NyAs1−y/GaAs-DH was measured at room temperature with N content y of 1.5, 2.3 and 2.9%, respectively. The PL intensity decreases with increasing N content, though the lattice mismatch of GaInNAs layers to GaAs substrates decreases with increasing N content. We also produced the laser diodes with GaInNAs active layer and measured the N content dependence of the threshold current density. With increasing N content, the threshold current density increases with the reduction of PL intensity. We made it clear that GaInNAs material system is applicable to a 1.3 μm laser diode on a GaAs substrate. We expect to achieve a good lasing performance at 1.3 μm with the most suitable growth condition and design of laser diodes.
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