Ultrathin HfO[sub 2](EOT<0.75 nm) Gate Stack with TaN∕HfN Electrodes Fabricated Using a High-Temperature Process
2005; Electrochemical Society; Volume: 8; Issue: 11 Linguagem: Inglês
10.1149/1.2052051
ISSN1944-8775
AutoresJinfeng Kang, H.Y. Yu, Chunyu Ren, M.-F. Li, D.S.H. Chan, Xinyu Liu, Dim‐Lee Kwong,
Tópico(s)Advancements in Semiconductor Devices and Circuit Design
ResumoHigh quality gate stacks with 0.65 nm of the equivalent oxide thickness and at of the gate leakage have been demonstrated. An -based Si-surface nitridation process was performed prior to deposition. The films were deposited in a metallorganic chemical vapor deposition cluster tool. The metal stacked layers were deposited on by reactive sputtering. The gate stack shows excellent thermal stability, in equivalent oxide thickness (EOT) and leakage after 1000°C annealing. A 10-year time dependent dielectric breakdown lifetime of 1000°C rapid thermal anneal annealed stack is projected at with an .
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