Epitaxial π-ν n-p-n high-voltage power transistors
1970; Institute of Electrical and Electronics Engineers; Volume: 17; Issue: 9 Linguagem: Inglês
10.1109/t-ed.1970.17062
ISSN1557-9646
Autores Tópico(s)Advancements in Semiconductor Devices and Circuit Design
ResumoA new silicon power-transistor structure has been developed which expands the frontiers of power-switching performance and high-voltage power-handling capability. This new structure employs a unique π-ν (nearly intrinsic p- and n-type) epitaxial-layer construction which utilizes "overlay" emitter concepts to achieve improved volt-ampere densities and expanded second-breakdown performance. An n + -p-π-ν-n + transistor structure is constructed using alternately grown π and ν, epitaxial high-resistivity layers, p-type base and n + emitter diffusions are used in the conventional manner to assure punch-through protection. The depletion region for the n + -p-π-ν-n + transistor is in the π base and the ν collector, and the maximum electrical field ( E_{\max} ) is at the π-ν interface. The avalanche breakdown V B of the device can be controlled by the thickness ( X_{n}, X_{p} ) and the concentration ( N_{A}, N_{D} ) of the π-ν layers. Limiting the thickness of the ν collector region and adjusting the thickness of the π base layer provides a transistor with optimum volt-ampere capability. Various π-ν structures have been fabricated and are evaluated electrically for power switching and for linear applications.
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