Improvement of Al-Polar AlN Layer Quality by Three-Stage Flow-Modulation Metalorganic Chemical Vapor Deposition
2008; Institute of Physics; Volume: 1; Linguagem: Inglês
10.1143/apex.1.021102
ISSN1882-0786
AutoresMisaichi Takeuchi, Shin Ooishi, Takumi Ohtsuka, Tomohiro Maegawa, Takahiro Koyama, Shigefusa F. Chichibu, Yoshinobu Aoyagi,
Tópico(s)Ga2O3 and related materials
ResumoImprovement of Al-polar AlN layer quality was accomplished by three-stage flow-modulation metalorganic chemical vapor deposition (FM-MOCVD). In this method, the unit of the FM-MOCVD sequence was composed of three stages; Stage I for simultaneous source supply, Stage II for trimethylaluminum supply, and Stage III for ammonia supply, which were cyclically repeated. The AlN quality revealed by X-ray diffraction strongly depended on the time of Stage I. A growth model was proposed considering the surface coverage of the islands nucleated during Stage I. Exciton fine structures were eventually observed by low-temperature cathodoluminescence reflecting the tremendously improved crystalline quality.
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