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Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfacial InGaZnO:N layer

2013; American Institute of Physics; Volume: 102; Issue: 19 Linguagem: Inglês

10.1063/1.4805354

1520-8842

Xiaoming Huang, Chenfei Wu, Hai Lu, Fangfang Ren, Dunjun Chen, Rong Zhang, Youdou Zheng,

Silicon and Solar Cell Technologies

Amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) having an ultra-thin nitrogenated a-IGZO (a-IGZO:N) layer sandwiched at the channel/gate dielectric interface are fabricated. It is found that the device shows enhanced bias stress stability with significantly reduced threshold voltage drift under positive gate bias stress. Based on x-ray photoelectron spectroscopy measurement, the concentration of oxygen vacancies within the a-IGZO:N layer is suppressed due to the formation of N-Ga bonds. Meanwhile, low frequency noise analysis indicates that the average trap density near the channel/dielectric interface continuously drops as the nitrogen content within the a-IGZO:N layer increases. The improved interface quality upon nitrogen doping agrees with the enhanced bias stress stability of the a-IGZO TFTs.