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Schottky Gated Field Effect Transistors and Visible Electroluminescent Diodes Utilizing Poly(3-alkylthiophene)s

1993; Volume: 227; Issue: 1 Linguagem: Inglês

10.1080/10587259308030982

1058-725X

Yutaka Ohmori, Masao Uchida, K. Muro, Chikayoshi Morishima, Katsumi Yoshino,

Molecular Junctions and Nanostructures

Abstract Fabrication and characteristics of Schottky gated field effect transistors (FETs) and visible electroluminescent (EL) diodes utilizing poly(3-alkylthiophene)s have been presented. The FETs show typical enhancement type metal-semiconductor FET characteristics. Large temperature dependence and gas-sensitivity have been found for poly(3-alkylthiophene) FETs. Visible red-orange poly(3-alkylthiophene) EL diodes have been successfully fabricated utilizing poly(3-alkylthiophene)s with long alkyl-side-chain. The emission intensity increases with increasing alkyl-side-chain length. Current-emission intensity characteristics show super-linear increase of the emission intensity with increasing injection current. Temperature dependence of emission intensity has been discussed. Camer mobility has also been evaluated from the pulse response of the emission.