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Influence of the growth temperature of AlN nucleation layer on AlN template grown by high-temperature MOCVD

2013; Elsevier BV; Volume: 114; Linguagem: Inglês

10.1016/j.matlet.2013.09.096

1873-4979

Yiren Chen, Hang Song, Dabing Li, Xiaojuan Sun, Hong Jiang, Zhiming Li, Guoqing Miao, Zhiwei Zhang, Yue Zhou,

ZnO doping and properties

We studied the influence of the growth temperature of AlN nucleation layer (TNL) on the AlN template grown by high-temperature metal-organic chemical vapor deposition (HT-MOCVD). The AlN templates were characterized by high-resolution X-ray diffractometer, atomic force microscopy and room-temperature Raman scattering spectrometer. The results revealed that the TNL had a direct influence on the quality of the AlN template. By optimizing the TNL at 950 °C, we obtained a high-quality AlN template with the full width at half maxima for the (0002) and (10–12) planes of 90″ and 612″, respectively. The AlN template also presented atomic level step with a root mean square (RMS) roughness of 0.133 nm. In addition, it performed excellent single crystallographic orientation along the c-axis. The growth evolution of AlN nucleation layer at different TNL was also explained in detail.