Amorphization of silicon by femtosecond laser pulses
2004; American Institute of Physics; Volume: 84; Issue: 16 Linguagem: Inglês
10.1063/1.1719280
ISSN1520-8842
AutoresJimmy Y. Jia, Ming Li, Carl V. Thompson,
Tópico(s)Silicon Nanostructures and Photoluminescence
ResumoWe have used femtosecond laser pulses to drill submicron holes in single crystal silicon films in silicon-on-insulator structures. Cross-sectional transmission electron microscopy and energy dispersive x-ray analysis of material adjacent to the ablated holes indicates the formation of a layer of amorphous Si. This demonstrates that even when material is ablated using femtosecond pulses near the single pulse ablation threshold, sufficient heating of the surrounding material occurs to create a molten zone which solidifies so rapidly that crystallization is bypassed.
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