High quality tensile-strained n-doped germanium thin films grown on InGaAs buffer layers by metal-organic chemical vapor deposition
2011; American Institute of Physics; Volume: 98; Issue: 9 Linguagem: Inglês
10.1063/1.3559231
ISSN1520-8842
AutoresR. Jakomin, M. de Kersauson, M. El Kurdi, L. Largeau, O. Mauguin, G. Beaudoin, S. Sauvage, Razvigor Ossikovski, G. Ndong, Marc Chaigneau, I. Sagnes, P. Boucaud,
Tópico(s)Nanowire Synthesis and Applications
ResumoWe show that high quality tensile-strained n-doped germanium films can be obtained on InGaAs buffer layers using metal-organic chemical vapor deposition with isobutyl germane as germanium precursor. A tensile strain up to 0.5% is achieved, simultaneously measured by x-ray diffraction and Raman spectroscopy. The effect of tensile strain on band gap energy is directly observed by room temperature direct band gap photoluminescence.
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