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Reducing threshold voltage shifts in amorphous silicon thin film transistors by hydrogenating the gate nitride prior to amorphous silicon deposition

1997; American Institute of Physics; Volume: 71; Issue: 9 Linguagem: Inglês

10.1063/1.120435

1520-8842

Jun-Wei Tsai, Chun-Yao Huang, Ya‐Hsiang Tai, Huang‐Chung Cheng, Feng-Cheng Su, Fang‐Chen Luo, Hsing-Chien Tuan,

ZnO doping and properties

A short H2 plasma treatment of the gate SiNx before depositing amorphous silicon (a-Si:H) is found to significantly decrease the threshold shifts in the bias stress, inverted a-Si:H thin film transistors (TFTs). The reduced threshold voltage shift is attributed to a plasma induced reconstruction of SiNx precursors leading to the removal of the weak bonds. A prolonged plasma treatment, however, degraded the TFT characteristics; this was traced H2 plasma damage which eventually generated a rough a-Si:H/SiNx interface.