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High-efficiency solar cells on phosphorus gettered multicrystalline silicon substrates

2006; Wiley; Volume: 14; Issue: 8 Linguagem: Inglês

10.1002/pip.736

1099-159X

O. Schultz, Stefan W. Glunz, Stephan Riepe, G. Willeke,

Semiconductor materials and interfaces

Progress in Photovoltaics: Research and ApplicationsVolume 14, Issue 8 p. 711-719 SHORT COMMUNICATION: ACCELERATED PUBLICATION: Research High-efficiency solar cells on phosphorus gettered multicrystalline silicon substrates O. Schultz, Corresponding Author O. Schultz [email protected] Fraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, D-79110 Freiburg, GermanyFraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, D-79110 Freiburg, Germany.===Search for more papers by this authorS. W. Glunz, S. W. Glunz Fraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, D-79110 Freiburg, GermanySearch for more papers by this authorS. Riepe, S. Riepe Fraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, D-79110 Freiburg, GermanySearch for more papers by this authorG. P. Willeke, G. P. Willeke Fraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, D-79110 Freiburg, GermanySearch for more papers by this author O. Schultz, Corresponding Author O. Schultz [email protected] Fraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, D-79110 Freiburg, GermanyFraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, D-79110 Freiburg, Germany.===Search for more papers by this authorS. W. Glunz, S. W. Glunz Fraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, D-79110 Freiburg, GermanySearch for more papers by this authorS. Riepe, S. Riepe Fraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, D-79110 Freiburg, GermanySearch for more papers by this authorG. P. Willeke, G. P. Willeke Fraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, D-79110 Freiburg, GermanySearch for more papers by this author First published: 30 October 2006 https://doi.org/10.1002/pip.736Citations: 39AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Abstract Measurements of the dislocation density are compared with locally resolved measurements of carrier lifetime for p-type multicrystalline silicon. A correlation between dislocation density and carrier recombination was found: high carrier lifetimes (>100 µs) were only measured in areas with low dislocation density ( 106 cm−2) relatively low lifetimes (<20 µs) were observed. In order to remove mobile impurities from the silicon, a phosphorus diffusion gettering process was applied. An increase of the carrier lifetime by about a factor of three was observed in lowly dislocated regions whereas in highly dislocated areas no gettering efficiency was observed. To test the effectiveness of the gettering in a solar cell manufacturing process, five different multicrystalline silicon materials from four manufacturers were phosphorus gettered. Base resistivity varied between 0·5 and 5 Ω cm for the boron- and gallium-doped p-type wafers which were used in this study. The high-efficiency solar cell structure, which has led to the highest conversion efficiencies of multicrystalline silicon solar cells to date, was used to fabricate numerous solar cells with aperture areas of 1 and 4 cm2. Efficiencies in the 20% range were achieved for all materials with an average value of 18%. Best efficiencies for 1 cm2 (20·3%) and 4 cm2 (19·8%) cells were achieved on 0·6 and 1·5 Ω cm, respectively. This proves that multicrystalline silicon of very different material specification can yield very high efficiencies if an appropriate cell process is applied. Copyright © 2006 John Wiley & Sons, Ltd. REFERENCES 1 Glunz SW, Rein S, Warta W, Knobloch J, Wettling W. On the degradation of Cz-silicon solar cells. Proceedings of the 2nd World Conference on Photovoltaic Energy Conversion, Vienna, Austria, 1998. 2 Schmidt J, Aberle AG, Hezel R. Investigation of carrier lifetime instabilities in Cz-grown silicon. Proceedings of the 26th IEEE Photovoltaic Specialists Conference, Anaheim, California, USA, 1997. 3 Dhamrin M, Hashigami H, Kamisako K, Saitoh T, Eguchi T, Hirasawa T, Yamaga I. Extra-exceptional high carrier lifetimes in Ga-doped mc-Si wafers toward millisecond range. Proceedings of the 19th European Photovoltaic Solar Energy Conference, Paris, France, 2004. 4 Schneiderlöchner E, Preu R, Lüdemann R, Glunz SW. Laser-fired rear contacts for crystalline silicon solar cells. Progress in Photovoltaics: Research and Applications 2002; 10: 29–35. 5 Schultz O, Glunz SW, Kray D, Dhamrin M, Yamaga I, Saitoh T, Willeke GP. High-efficiency multicrystalline silicon solar cells on gallium-doped substrate. Proceedings of the 20th European Photovoltaic Solar Energy Conference, Barcelona, Spain, 2005. 6 Geerligs LJ, Macdonald D. Base doping and recombination activity of impurities in crystalline silicon solar cells. Progress in Photovoltaics: Research and Applications 2004; 12(4): 309–316. 7 Glunz SW, Rein S, Lee JY, Warta W. Minority carrier lifetime degradation in boron-doped Czochralski silicon. Journal of Applied Physics 2001; 90(5): 2397–2404. 8 Périchaud I. Gettering of impurities in solar silicon. Solar Energy materials and Solar Cells 2002; 72(1–4): 315–326. 9 Schultz O, Glunz SW, Willeke G. Multicrystalline silicon solar cells exceeding 20% efficiency. Progress in Photovoltaics: Research and Applications 2004; 12(7): 553–558. 10 Isenberg J, Riepe S, Glunz SW, Warta W. Imaging method for laterally resolved measurement of minority carrier densities and lifetimes: measurement principle and first applications. Journal of Applied Physics 2003; 93(7): 4268–4275. 11 Bail M, Kentsch J, Brendel R, Schulz M. Lifetime mapping of Si wafers by an infrared camera [for solar cell production]. Proceedings of the 28th IEEE Photovoltaics Specialists Conference, Anchorage, USA, 2000. 12 Secco d'Aragona F. Dislocation etch for (100) planes in silicon. Solid-State Science and Technology 1972; 119(7): 948–951. 13 Riepe S, Stokkan G, Kieliba T, Warta W. Carrier Density Imaging as a tool for characterising the electrical activity of defects in pre-processed multicrystalline silicon. Solid State Phenomena 2004; 95–96: 229–234. 14 Narayanan S, Wenham SR, Green MA. High efficiency polycrystalline silicon solar cells using phosphorus pretreatment. Applied Physics Letters 1986; 48(13): 873–875. 15 Schultz O, Rentsch J, Grohe A, Glunz SW, Willeke GP. Dielectric rear surface passivation for industrial multicrystalline silicon solar cells. Proceedings of the 4th World Conference on Photovoltaic Energy Conversion, Waikoloa, Hawaii, USA, 2006. 16 Kittler M, Seifert W. Estimation of the upper limit of the minority-carrier diffusion length in multicrystalline silicon: limitation of the action of gettering and passivation on dislocations. Solid State Phenomena 2004; 95–96: 197–204. Citing Literature Volume14, Issue8December 2006Pages 711-719 ReferencesRelatedInformation