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Efficient hole transport in asymmetric coupled InGaN multiple quantum wells

2009; American Institute of Physics; Volume: 95; Issue: 16 Linguagem: Inglês

10.1063/1.3254232

1520-8842

Jiangyong Zhang, Lie Cai, Baoping Zhang, Xiaolong Hu, Fang Jiang, Jinzhong Yu, Qiming Wang,

ZnO doping and properties

InGaN based light emitting devices (LEDs) with asymmetric coupled quantum wells (AS-QWs) and conventional symmetric coupled quantum wells (CS-QWs) active structures were grown by metal-organic chemical vapor deposition technique. The LEDs with AS-QWs active region show improved light emission intensity and reduced forward voltage compared with LEDs with CS-QWs active region. Based on the electroluminescence measurements and the devices structure analysis, it can be concluded that these improvements are mainly attributed to the efficient hole tunneling through barriers and consequently the uniform distribution of carriers in the AS-QWs.