On the chemical transport of gallium oxide in the Ga2O3/N-H-Cl system
1986; Elsevier BV; Volume: 79; Issue: 1-3 Linguagem: Inglês
10.1016/0022-0248(86)90471-9
ISSN1873-5002
AutoresA. Paja̧czkowska, H. Juskowiak,
Tópico(s)Luminescence Properties of Advanced Materials
ResumoThe influence of nitrogen on the chemical transport of gallium oxide using the N-H-Cl mixtures as transporting agents in a closed tube has been investigated. Two compositions of transporting agents, NH4Cl+1.5Cl2 and NH4Cl, are considered. On the basis of experiments and thermodynamic calculations it has been found that transporting agents such as NH4Cl+1.5Cl2 can be considered like a source of HCl. In the Ga2O3/NH4Cl system exo- and endothermic processes have been found in the temperature ranges below and above 1000 K temperature, respectively. The influence of the GaCl3·NH3 gaseous complex on the chemical transport of Ga2O3 from the cool to the hot zone has been found. On the basis of X-ray structure analysis and thermodynamic considerations, β-Ga2O3 proved to be the only solid phase in the Ga2O3/N-H-Cl systems.
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