Interstitial H 2 in germanium by Raman scattering and ab initio calculations
2005; American Physical Society; Volume: 72; Issue: 15 Linguagem: Inglês
10.1103/physrevb.72.153201
ISSN1550-235X
AutoresM. Hiller, E. V. Lavrov, J. Weber, B. Hourahine, R. Jones, P. R. Briddon,
Tópico(s)Ion-surface interactions and analysis
ResumoSingle-crystalline germanium wafers exposed to hydrogen and/or deuterium plasma are studied by means of Raman scattering. The Raman frequencies are compared to results of ab initio calculations. For samples treated with pure hydrogen, Raman measurements performed at a temperature of $80\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ reveal two sharp lines at 3826 and $3834\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}1}$ with an intensity ratio of 3:1, which are assigned to ortho- and para-${\mathrm{H}}_{2}$ trapped at the interstitial $T$ site of the lattice.
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