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<title>Photon-counting techniques with silicon avalanche photodiodes</title>

1993; SPIE; Linguagem: Inglês

10.1117/12.144738

1996-756X

H. Dautet, P. Deschamps, Bruno Dion, Andrew D. MacGregor, Darlene E. Macsween, R.J. McIntyre, C. Trottier, P.P. Webb,

CCD and CMOS Imaging Sensors

Silicon avalanche photodiodes (APD) have been used for photon counting for a number of years. This paper reviews their properties and the associated electronics required for photon counting in the Geiger mode. Significant improvements are reported in overall photon detection efficiencies (approaching 75% at 633 nm), and timing jitter (under 200 ps) achieved at high over-voltages (20 - 30 V). Results obtained using an active-mode fast quench circuit capable of switching over-voltages as high as 20 V (giving photon detection efficiencies in the 50% range), are reported with a dead-time of less than 50 ns. Larger diodes (up to 1 mm diameter), usable in the Geiger mode, which have quantum efficiencies over 80% in the 500 - 800 nm range also are reported.