Current Collapse in AlGaN/GaN HEMTs Investigated by Electrical and Optical Characterizations
2002; Wiley; Volume: 194; Issue: 2 Linguagem: Inglês
10.1002/1521-396x(200212)194
ISSN1521-396X
AutoresT. Mizutani, Yutaka Ohno, M. Akita, Shigeru Kishimoto, K. Maezawa,
Tópico(s)Advancements in Semiconductor Devices and Circuit Design
ResumoDrain current collapse in AlGaN/GaN HEMTs has been studied in detail. Applying negative gate bias stress to the device caused a serious current collapse. Spatially resolved light illumination on the device combined with the measurement of series source and drain resistances revealed that the collapse was caused by the electrons trapped at the surface states between the gate and drain electrodes. Passivation of the device surface with Si3N4 film eliminated the current collapse.
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