Portal de Periódicos da CAPES

Orientation control of Ge thin films by underlayer-selected Al-induced crystallization

2014; Royal Society of Chemistry; Volume: 16; Issue: 13 Linguagem: Inglês

10.1039/c3ce42057d

1466-8033

Kaoru Toko, Kimitaka Nakazawa, Noriyuki Saitoh, Noriko Yoshizawa, Noritaka Usami, Takashi Suemasu,

Semiconductor materials and devices

The crystal orientation of a polycrystalline Ge thin film is controlled by selecting the underlayer material during Al-induced low-temperature (325 °C) crystallization. A TiN underlayer yields highly (111)-oriented Ge with large grains (nearly 100 μm), which is useful as a buffer layer for III–V compound semiconductors and other advanced materials.