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High electron mobility and low sheet resistance in lattice-matched AlInN/AlN/GaN/AlN/GaN double-channel heterostructure

2009; American Institute of Physics; Volume: 95; Issue: 21 Linguagem: Inglês

10.1063/1.3264961

1520-8842

Shunan Zhang, Meicheng Li, Zhihong Feng, B. Liu, Jun Yin, Liancheng Zhao,

ZnO doping and properties

High electron mobility and low sheet resistance were achieved in lattice-matched AlInN/AlN/GaN/AlN/GaN double-channel (DC) heterostructure. Two-dimensional electron gas (2DEG) of the DC heterostructure was divided into the double channels and the room-temperature mobility was increased to 1430 cm2/V s by reducing the 2DEG density in each channel, compared with low electron mobility (1090 cm2/V s) for lattice-matched AlInN/AlN/GaN single-channel heterostructure. It was found that the 2DEG mobility was limited by thickness of the AlN interlayer between the double channels. After the structure optimization, the room temperature electron mobility of the DC heterostructure reached 1570 cm2/V s with sheet resistance of 222 Ω/◻.