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Identification of satellite lines in the X-ray spectrum of foil-excited silicon

1979; IOP Publishing; Volume: 12; Issue: 15 Linguagem: Inglês

10.1088/0022-3700/12/15/001

1747-3721

E. Träbert, B C Fawcett,

Crystallography and Radiation Phenomena

Satellite lines are identified in the X-ray spectrum of foil-excited fast silicon ions. These lines result from transitions from levels of principal quantum number n: up to n=6 in He-like Si XIII, up to n=5 in Li-like Si XII, and up to n=3 in Si XI, Si X, Si IX and Si VIII. The identifications are made with the aid of theoretical 'Hartree-XR' atomic-structure calculations of energy levels and oscillator strengths.