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A 40‐W balanced GaN HEMT class‐E power amplifier with 71% efficiency for WCDMA base station

2009; Wiley; Volume: 51; Issue: 3 Linguagem: Inglês

10.1002/mop.24150

ISSN

1098-2760

Autores

Yong‐Sub Lee, Mun‐Woo Lee, Yoon‐Ha Jeong,

Tópico(s)

Wireless Power Transfer Systems

Resumo

Abstract A balanced class‐E power amplifier (PA) using a push‐pull GaN HEMT for high power and high efficiency is represented. For validation, a class‐E PA is designed and implemented using a push‐pull type GaN HEMT and tested for a single tone of 2.14 GHz. The measured results show that the balanced GaN HEMT class‐E PA shows a drain efficiency and power‐added efficiency (PAE) of 71% and 67.4% at an output power of 40 W with a gain of 13 dB through the significant harmonic suppression of below −51 dBc. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 842–845, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24150

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