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Molecular beam epitaxy of CdSe epilayers and quantum wells on ZnTe substrate

2007; Elsevier BV; Volume: 253; Issue: 16 Linguagem: Inglês

10.1016/j.apsusc.2007.02.012

1873-5584

Y.M. Park, R. André, Jacek Kasprzak, Le Si Dang, E. Bellet‐Amalric,

Advanced Semiconductor Detectors and Materials

We have grown zinc-blende cadmium selenide (CdSe) epilayers on ZnTe-(0 0 1) substrate by molecular beam epitaxy (MBE). By controlling the substrate temperature and beam-equivalent pressure (BEP) ratio, of Se to Cd, we determined the most suitable growth condition based on reflection high-energy electron diffraction (RHEED) pattern. At a substrate temperature of 280 °C and a BEP ratio of 3.6, the RHEED pattern showed a V-like feature, indicating a rough surface with facets. As the substrate temperature was increased to 360 °C at the same BEP ratio, a V-like RHEED pattern moved to a clear streaky pattern. Moreover when the BEP ratio was increased to 4.8 at 360 °C of substrate temperature, a clear (2 × 1) reconstruction of the CdSe layer was observed. A CdSe/CdMgSe single quantum well structure was also grown on ZnTe-(0 0 1) substrate by MBE. The RHEED pattern showed a clear (2 × 1) surface reconstruction during the growth. By photoluminescence measurement, a good optical property of the structure was obtained.