Crystallinity improvement of hexagonal boron nitride films by molybdenum catalysts during microwave plasma chemical vapor deposition and post-annealing
2012; Elsevier BV; Volume: 258; Issue: 24 Linguagem: Inglês
10.1016/j.apsusc.2012.06.108
ISSN1873-5584
Autores Tópico(s)Boron and Carbon Nanomaterials Research
ResumoHexagonal boron nitride (hBN) is a promising deep ultraviolet light emitter. Here we report the catalytic growth of hBN films by microwave plasma chemical vapor deposition (MPCVD). The hBN films were first grown on Mo/Si substrate from a gas mixture of N2, BF3, and H2 and then annealed in nitrogen for 3 h at 900 °C. The Mo catalysts exhibit obvious catalyzing effects in improving the crystallinity of the hBN films during the growth and annealing processes. Well-crystallized hBN films with small Raman peak width of 9.3 cm−1 and sharp photoluminescence emission peak at 293 nm were obtained.
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