Bottom-up Photonic Crystal Lasers
2011; American Chemical Society; Volume: 11; Issue: 12 Linguagem: Inglês
10.1021/nl2030163
ISSN1530-6992
AutoresAdam C. Scofield, Se‐Heon Kim, Joshua Shapiro, Andrew Lin, Baolai Liang, Axel Scherer, Diana L. Huffaker,
Tópico(s)Optical Coatings and Gratings
ResumoThe directed growth of III–V nanopillars is used to demonstrate bottom-up photonic crystal lasers. Simultaneous formation of both the photonic band gap and active gain region is achieved via catalyst-free selective-area metal–organic chemical vapor deposition on masked GaAs substrates. The nanopillars implement a GaAs/InGaAs/GaAs axial double heterostructure for accurate, arbitrary placement of gain within the cavity and lateral InGaP shells to reduce surface recombination. The lasers operate single-mode at room temperature with low threshold peak power density of ∼625 W/cm2. Cavity resonance and lasing wavelength is lithographically defined by controlling pillar pitch and diameter to vary from 960 to 989 nm. We envision this bottom-up approach to pillar-based devices as a new platform for photonic systems integration.
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