A comparative study of silicon deposition from SiCl4 in cold plasma using argon, H2 or Ar + H2
1988; Elsevier BV; Volume: 156; Issue: 1 Linguagem: Inglês
10.1016/0040-6090(88)90284-2
ISSN1879-2731
AutoresRafael R. Manory, U. Carmi, R. Avni, A. Grill,
Tópico(s)Ion-surface interactions and analysis
ResumoAbstract The deposition of silicon by cold plasmas using SiCl4 as the starting gas was studied using argon, hydrogen or a mixture of both as carrier gases. Electron temperatures and densities in these plasmas, as well as plasma species and growth rates, are compared. A good correlation was found between the reaction rates for the decomposition of the reactant and the growth rates of the films in each kind of plasma. The optimal values were measured when a mixture of argon and hydrogen was used. The differences observed between the three plasmas are attributed to the differences in plasma constituents, as detected by the double floating probes system and by mass spectrometry. A schema for the homogeneous (gas phase) and heterogeneous (plasma-surface) interactions in these plasmas is described.
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