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Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors

2008; American Institute of Physics; Volume: 92; Issue: 26 Linguagem: Inglês

10.1063/1.2949087

1520-8842

Takuma Nanjo, Misaichi Takeuchi, Muneyoshi Suita, Toshiyuki Oishi, Yuji Abe, Yasunori Tokuda, Yoshinobu Aoyagi,

Silicon Carbide Semiconductor Technologies

The channel layer substitution of a wider bandgap AlGaN for a conventional GaN in high electron mobility transistors (HEMTs) is an effective method of enhancing the breakdown voltage. We demonstrated a remarkable breakdown voltage enhancement in these AlGaN channel HEMTs. The obtained maximum breakdown voltages were 463 and 1650V in the Al0.53Ga0.47N∕Al0.38Ga0.62N HEMT with the gate-drain distances of 3 and 10μm, respectively. This result is very promising for the further higher power operation of high-frequency HEMTs.