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<title>Optical study of CdSe<formula><inf><roman><emph type="1">x</emph></roman></inf></formula>S<formula><inf><roman>l-<emph type="1">x</emph></roman></inf></formula> crystals doped with Cr</title>

2005; SPIE; Linguagem: Inglês

10.1117/12.639408

1996-756X

V. Kasiyan, Z. Dashevsky, Roni Z. Shneck, Yuri V. Korostelin, Alexander I. Landman,

Laser-Matter Interactions and Applications

Solid-state broadband lasers emitting in the 2-4 μm region are of interest for a variety of applications. However, conventional lasers for these wavelengths have limitations, such as the complexity and cryogenic operation. Recently, alternative materials for the mid-IR lasers--Cr 2+ -doped II-VI chalcogenide crystals-have been proposed. The RT mid- IR absorption in these crystals is due to the effective Cr 2+ intracenter transitions. We present the results of an investigation of the Cr 2+ crystals. The crystals were grown from the CdSe source by seeded physical vapor transport in the helium atmosphere with a wafer of CdSe x S 1-x as a seed. A CrSe source was used for the growth-time doping. The changing sulfur content along the growth axis was determined by energy dispersive x-ray microanalysis. An absorption peak in the IR range of 1.5-2.2 μm due to the Cr 2+ intracenter transition 5 T 2 -> 5 E of ions was revealed. The maximum peak absorption was determined to be 4.5 cm -1 . The concentration of the 2+ ions in the samples calculated from the IR absorption was found to vary fkom 1x10 17 to 3x10 18 cm -3 . With the sulfur content, the intracenter absorption peak shifts to shorter wavelengths.