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Study of the Growth Mechanism of Nanocrystalline Si:H Films Prepared by Reactive Hydrogen Plasma Sputtering of Silicon

1994; Institute of Physics; Volume: 33; Issue: 12A Linguagem: Inglês

10.1143/jjap.33.l1645

1347-4065

Yong Sun, Ryusuke Nishitani, Tatsuro Miyasato,

Nanowire Synthesis and Applications

The growth mechanism of hydrogenated nanocrystalline silicon (nc-Si:H) films prepared by reactive hydrogen plasma sputtering of silicon has been studied by means of X-ray diffraction, Raman scattering, and infrared absorption (FT-IR) measurements and SEM observation, and by the diagnosis of the plasma. The nc-Si:H films obtained consist of aggregations of nanocrystalline silicon surrounded by hydrogen atoms. We have found that growth rate and various properties of the nc-Si:H films such as grain size, hydrogen content and morphology are associated both with the incident flux densities of hydrogen ions and the SiH x ( x =0–4) species.