High capacity liquid phase epitaxy apparatus utilizing thin melts
1973; Elsevier BV; Volume: 16; Issue: 11 Linguagem: Inglês
10.1016/0038-1101(73)90085-3
ISSN1879-2405
AutoresO. G. Lorimor, R. H. Saul, L. R. Dawson, C.R. Paola,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoAbstract A remarkably simple LPE system is presented which utilizes thin melts and accommodates a large number of substrates. In this system, denoted as aliquot rotator, the substrates are mounted in pairs back-to-back in a horizontal stack and separated by ∼ 2 mm which is twice the effective melt thickness. Several laboratory prototype models were farbicated which were mechanically sealed to eliminate stringent ambient requirements and to prevent loss of volatile dopants. Deposition is confined to a narrow temperature interval and melt removal occurs uniformly over the entire substrate upon the termination of layer growth. Consequently, the surface doping levels are readily controlled. Double LPE material for GaP red LED's was grown to demonstrate the feasability of this system. Encapsulated mesa diode efficiencies averaging 6 per cent with values as high as 9 per cent have been obtained. The combination of high capacity, thin melts, operational simplicity, and high device performance make the aliquot rotator attractive for commercial applications.
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